The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2010

Filed:

Oct. 29, 2007
Applicants:

Seung-wook Lee, Seoul, KR;

Deok Hee Lee, Seoul, KR;

Eunseok Song, Seoul, KR;

Joonbae Park, Seoul, KR;

Kyeongho Lee, Seoul, KR;

Inventors:

Seung-Wook Lee, Seoul, KR;

Deok Hee Lee, Seoul, KR;

Eunseok Song, Seoul, KR;

Joonbae Park, Seoul, KR;

Kyeongho Lee, Seoul, KR;

Assignee:

GCT Semiconductor, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the present general inventive concept include a low noise amplifier and method with an improved linearity while reducing a noise disadvantage (e.g., increase). One embodiment of a low noise amplifier can include a first transistor to receive an input signal at a control terminal thereof, a second transistor having a first terminal coupled to a second terminal of the first transistor, an envelope detector to output a control signal corresponding to a characteristic of the input signal and an envelope amplifier to amplify the control signal to be applied to a control terminal of the second transistor.


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