The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7812452 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 12, 2010

Filed:

Jul. 13, 2007
Applicant:

Kazuhide Abe, Tokyo, JP;

Inventor:

Kazuhide Abe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to the present invention includes a semiconductor substrate; a capacitor having a lower electrode formed on said semiconductor substrate, a capacity insulating film formed on said lower electrode, and an upper electrode formed on said capacity insulating film; contact holes formed on said upper electrode and said lower electrode; a barrier layer containing oxygen, formed inside said contact holes; and a conductive layer which fills said contact holes in which said barrier layer is formed on the inside.


Find Patent Forward Citations

Abe, Kazuhide. (2010). Semiconductor device having barrier layer comprised of dissimilar materials, and method for fabricating the same (U.S. Patent No. 7812452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7812452

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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