The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7812420 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 12, 2010

Filed:

Oct. 02, 2006
Applicants:

Yu-da Shiu, Chutung, Hsinchu, TW;

Chyh-yih Chang, Chutung, Hsinchu, TW;

Ming-dou Ker, Chutung, Hsinchu, TW;

Che-hao Chuang, Chutung, Hsinchu, TW;

Inventors:

Yu-Da Shiu, Chutung, Hsinchu, TW;

Chyh-Yih Chang, Chutung, Hsinchu, TW;

Ming-Dou Ker, Chutung, Hsinchu, TW;

Che-Hao Chuang, Chutung, Hsinchu, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.


Find Patent Forward Citations

Shiu, Yu-Da. (2010). Polydiode structure for photo diode (U.S. Patent No. 7812420). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7812420

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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