The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Sep. 21, 2006
Kouji Watanabe, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Kouji Masuzaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating filmformed on a semiconductor layerand a gate electrodeformed on the gate insulating film. The gate insulating filmhas a silicon oxide film including a metal elementand nitrogen, and characteristics of the silicon oxide film are modified by adding the metal elementand nitrogen. Respective concentration distributions of the metal elementand nitrogenin the gate insulating filmhave maximum values on an interface side between the gate insulating filmand the gate electrode, and gradually decrease toward the semiconductor layer