The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Oct. 15, 2008
Hideyuki Kinoshita, Yokkaichi, JP;
Hideyuki Kinoshita, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device has forming a first insulating film on a semiconductor substrate, forming an electrode layer on said first insulating film, etching said electrode layer, said first insulating film and said semiconductor substrate of a first predetermined region to form a trench, burying an element-isolating insulating film in said trench, forming a second insulating film on said element-isolating insulating film and above said electrode layer, etching said second insulating film, said electrode layer and said element-isolating insulating film of a second predetermined region to form a gate pattern and a dummy pattern, forming a third insulating film for covering said gate pattern and said dummy pattern, and planarizing said third insulating film using said second insulating film as a stopper.