The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jan. 15, 2009
Kazuhiro Matsuo, Mie, JP;
Masayuki Tanaka, Kanagawa, JP;
Atsuhiro Suzuki, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile