The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Mar. 04, 2008
Hao-chih Yuan, Madison, WI (US);
Guogong Wang, Madison, WI (US);
Mark A. Eriksson, Madison, WI (US);
Paul G. Evans, Madison, WI (US);
Max G. Lagally, Madison, WI (US);
Zhenqiang MA, Middleton, WI (US);
Hao-Chih Yuan, Madison, WI (US);
Guogong Wang, Madison, WI (US);
Mark A. Eriksson, Madison, WI (US);
Paul G. Evans, Madison, WI (US);
Max G. Lagally, Madison, WI (US);
Zhenqiang Ma, Middleton, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile