The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jul. 06, 2007
Han-youl Ryu, Yongin-si, KR;
Han-youl Ryu, Yongin-si, KR;
Samsung Led Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor light emitting device may include an n-type contact layer on a substrate. An active layer may be on the n-type contact layer and/or include two or more quantum well layers and two or more barrier layers. A p-type contact layer may be on the active layer. Energy band gaps of the quantum well layers may be larger as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, thicknesses of the quantum well layers may be smaller as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, and/or energy band gaps of the barrier layers may be larger as the barrier layers are closer to the n-type contact layer from the p-type contact layer.