The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jun. 22, 2009
Jong Shik Yoon, Plano, TX (US);
Andrew Tae Kim, Plano, TX (US);
Jong Shik Yoon, Plano, TX (US);
Andrew Tae Kim, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides, in one embodiment, a method of manufacturing a metal oxide semiconductor (MOS) transistor (). The method comprises forming an active area () in a substrate (), wherein the active area () is bounded by an isolation structure (). The method further includes placing at least one stress adjuster () adjacent the active area (), wherein the stress adjuster () is positioned to modify a mobility of a majority carrier within a channel region () of the MOS transistor (). Other embodiments of the present invention include a MOS transistor device () and a process () for constructing an integrated circuit.