The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Sep. 28, 2007
Applicants:
Ramachandran Muralidhar, Mahopac, NY (US);
Tushar P. Merchant, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Inventors:
Ramachandran Muralidhar, Mahopac, NY (US);
Tushar P. Merchant, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01); H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.