The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jul. 12, 2006
Gabriele Barlocchi, Cornaredo, IT;
Pietro Corona, Milan, IT;
Dino Faralli, Milan, IT;
Flavio Francesco Villa, Milan, IT;
Gabriele Barlocchi, Cornaredo, IT;
Pietro Corona, Milan, IT;
Dino Faralli, Milan, IT;
Flavio Francesco Villa, Milan, IT;
STMicroelectronics S.R.L., Agrate Brianza (MI), IT;
Abstract
A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.