The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jul. 07, 2006
Shigeki Makino, Kokubunji, JP;
Shigeki Makino, Kokubunji, JP;
Opnext Japan, Inc., Yokohama-shi, Kanagawa, JP;
Abstract
In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed. A quantum well structure in which a well layer made of any one of InGaAlAs, InGaAsP, and InGaAs, and a barrier layer made of either one of InGaAlAs or InAlAs is used for an optical absorption layer of an EA modulator. By properly determining detuning at a temperature of 25° C. and a composition wavelength of the barrier layer in the quantum well structure used for the optical absorption layer, it can be realized to suppress the insertion loss, maintain the extinction ratio, and reduce chirping simultaneously over a wide temperature range from −5° C. to 80° C.