The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jul. 23, 2009
Atsuko Kawasaki, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Ikuko Inoue, Yokohama, JP;
Masayuki Ayabe, Yokohama, JP;
Masahiro Sekiguchi, Yokohama, JP;
Kazumasa Tanida, Kawasaki, JP;
Atsuko Kawasaki, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Ikuko Inoue, Yokohama, JP;
Masayuki Ayabe, Yokohama, JP;
Masahiro Sekiguchi, Yokohama, JP;
Kazumasa Tanida, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.