Pmos transistor with increased effective channel length in the peripheral region and method of manufacturing the same

Abstract

In manufacturing a PMOS transistor, a semiconductor substrate having an active region and a field region is formed with a hard mask layer, which covers a center portion of the active region on the substrate in a lengthwise direction of a channel. The hard mask layer exposes the center portion of the active region in a widthwise direction of the channel and covers both edges of the substrate and the field region adjacent to the both edges. The substrate is etched to a predetermined depth using the hard mask layer as an etching barrier. The hard mask layer is then removed. A gate covering the center portion of the active region is formed on the lengthwise direction of the channel. Source and drain regions are formed at both edges of the gate.