The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Oct. 11, 2007
Hiroshi Furuta, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor integrated circuit device includes a first field-effect transistor and a second field-effect transistor, each of the first field-effect transistor and the second field-effect transistor having a gate electrode formed as a ring shape, a drain diffusion layer formed inside the gate electrode and a source diffusion layer formed outside the gate electrode and a substrate potential diffusion layer or a well potential diffusion layer disposed to contact each of the source diffusion layers of the first and the second field-effect transistors of the same conductivity type, the substrate potential diffusion layer or the well potential diffusion layer being formed with a semiconductor of a different conductivity type from the source diffusion layer. Different signals are input to each of the gate electrodes, the substrate potential diffusion layer or the well potential diffusion layer are formed between the source diffusion layer of the first field-effect transistor and the source diffusion layer of the second field-effect transistor.