The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2010

Filed:

Jun. 07, 2006
Applicants:

Yoon Sung Lee, Kyoungki-do, KR;

Kook Whee Kwak, Kyoungki-do, KR;

Inventors:

Yoon Sung Lee, Kyoungki-do, KR;

Kook Whee Kwak, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

The electrostatic protection device includes a semiconductor substrate having a well formed therein. At least two sets of transistor fingers, for example the NMOS type, are spaced apart from each other. Each set of the MOS fingers includes multiple gates arranged in parallel to each other in one direction, and sources and drains alternately arranged at both sides of the gates in the semiconductor substrate. A well pickup surrounding every set of the transistor fingers and extending between any two set of the fingers is formed. Metal wires are connected to at least two portions of each of the drains and are also connected to an input/output pad to which Electrostatic Discharge (ESD) excessive current is introduced.


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