The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jul. 27, 2006
Yong-uk Lee, Gyeonggi-do, KR;
Joon-hak OH, Gyeonggi-do, KR;
Bo-sung Kim, Seoul, KR;
Mun-pyo Hong, Gyeonggi-do, KR;
Yong-uk Lee, Gyeonggi-do, KR;
Joon-hak Oh, Gyeonggi-do, KR;
Bo-sung Kim, Seoul, KR;
Mun-pyo Hong, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.