The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Feb. 05, 2007
Katsutoshi Saeki, Miyagi, JP;
Katsutoshi Saeki, Miyagi, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A semiconductor memory has a gate electrode and a pair of multilayer memory elements formed on side surfaces of the gate electrode. Each multilayer memory element includes, in sequence from the gate electrode outward, a first silicon oxide layer, a charge trapping silicon nitride layer, a second silicon oxide layer, all with L-shaped cross sections, and a protective silicon nitride layer with an approximately rectangular cross section seated in the L-shape of the second silicon oxide layer. The protective silicon nitride layer protects the charge trapping silicon nitride layer from etching damage during the formation of contact holes without adding to the area occupied by the memory cell.