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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7808034 B1

PDFFull Text
Date of Patent:
Oct. 05, 2010

Filed:

Jan. 12, 2007

Non-volatile memory cell with fully isolated substrate as charge storage

Applicants:

Jeff Babcock, Sunnyvale, CA (US);

Natasha Layrovskava, Sunnyvale, CA (US);

Yuri Mirgorodski, San Jose, CA (US);

Saurahh Desai, Fremont, CA (US);

Inventors:

Jeff Babcock, Sunnyvale, CA (US);

Natasha Layrovskava, Sunnyvale, CA (US);

Yuri Mirgorodski, San Jose, CA (US);

Saurahh Desai, Fremont, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:

Jurgen K. Vollrath

Vollrath & Associates

Primary Examiner:

Sue A Purvis

Assistant Examiner:

Benjamin P Sandvik

Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a control gate and a third poly strip coupled to a read transistor gate.

Find Patent Forward Citations

Quick Actions:

Babcock, Jeff. (2010). Non-volatile memory cell with fully isolated substrate as charge storage (U.S. Patent No. 7808034). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7808034

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