The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Sep. 14, 2006
Berinder Brar, Newbury Park, CA (US);
Joshua I. Bergman, Thousand Oaks, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Gerard J. Sullivan, Newbury Park, CA (US);
Berinder Brar, Newbury Park, CA (US);
Joshua I. Bergman, Thousand Oaks, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Gerard J. Sullivan, Newbury Park, CA (US);
Teledyne Licensing, LLC, Thousand Oaks, CA (US);
Abstract
A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.