The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
May. 22, 2006
Woo Yung Jung, Seoul, KR;
Tae Kyung Kim, Icheon-si, KR;
Eun Soo Kim, Incheon, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming a semiconductor device includes forming drain contact holes in a first interlayer insulating layer provided over a semiconductor substrate. First metal material is formed over the first interlayer insulating layer and fills the drain contact holes. A first metal layer formed by patterning the first metal material includes first lines and landing pads. Trenches formed in a second interlayer insulating layer formed over the patterned first metal material expose the landing pads. A second metal layer is formed by providing second metal material over the second interlayer insulating layer and filling the trenches. The second metal layer includes second lines within the trenches that contact the landing pads. The first and second metal layers define a first metal level of the semiconductor device. The first lines define odd-number lines of the first metal level, and the second lines define even-number lines of the first metal level.