The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jun. 27, 2008
Young Bok Lee, Icheon-si, KR;
Young Bok Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-Si, Kyoungki-do, KR;
Abstract
A method of inspecting defects in a semiconductor device includes forming a test pattern in a scribe lane region of a semiconductor substrate. The test pattern includes a second conductive layer formed on an isolation layer of the semiconductor substrate. Further, the method includes measuring a current flowing between the second conductive layer and the semiconductor substrate by applying a first voltage between the second conductive layer and the semiconductor substrate. Defects formed in the isolation layer can be inspected during a semiconductor manufacturing process. Accordingly, the yield of semiconductor devices can be improved with the inspection results.