The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
May. 25, 2007
Hisato Kato, Hachioji, JP;
Haruo Kawakami, Miura, JP;
Nobuyuki Sekine, Hachioji, JP;
Kyoko Kato, Zushi, JP;
Hisato Kato, Hachioji, JP;
Haruo Kawakami, Miura, JP;
Nobuyuki Sekine, Hachioji, JP;
Kyoko Kato, Zushi, JP;
Fuji Electric Holding Co., Ltd., Kawasaki-Shi, Kanagawa-Ken, JP;
Abstract
Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: InMZnSnO(wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.