The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Dec. 28, 2009
Applicants:
Hyung Kyun Kim, Seoul, KR;
Yong Soo Joung, Gyeonggi-do, KR;
Inventors:
Hyung Kyun Kim, Seoul, KR;
Yong Soo Joung, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for manufacturing a semiconductor device are provided that reduces the thickness of an oxide layer formed on a polysilicon layer for bit line contacts. A reduced thickness oxide layer can prevent short circuits between adjoining bit lines. A reduced thickness oxide layer can also eliminate the need for overetching in a subsequent etching process, thereby preventing loss of an isolation layer in a peripheral region.