The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jan. 26, 2007
Pooran Chandra Joshi, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
John W. Hartzell, Camas, WA (US);
Pooran Chandra Joshi, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
John W. Hartzell, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A high-density plasma method is provided for forming a SiONthin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiONthin-film is formed, where (X+Y<2 and Y>0). The SiONthin-film can be stoichiometric or non-stoichiometric. The SiONthin-film can be graded, meaning the values of X and Y vary with the thickness of the SiONthin-film. Further, the process enables the in-situ deposition of a SiONthin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiONthin-films.