The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Jun. 02, 2006
Applicants:

Shigetoshi Ito, Shijonawate, JP;

Kunihiro Takatani, Nara, JP;

Susumu Omi, Mihara, JP;

Inventors:

Shigetoshi Ito, Shijonawate, JP;

Kunihiro Takatani, Nara, JP;

Susumu Omi, Mihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/097 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.


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