The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Sep. 22, 2008
Allan Parker, Austin, TX (US);
Allan Parker, Austin, TX (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Flash memory systems and methodologies are provided herein for providing byte alterability in a flash device. Logical cell mapping is changed from using a single physical memory cell to using two adjacent physical cells as a logical cell for emulating byte alterability. By mapping two adjacent physical cells as a single logical cell, the logical cell is a combination of neighboring drain/source regions, thereby creating a single program and erase entity. The single program and erase entities can allow for logical cell erase and program in either direction of a low voltage state or a high voltage state on a single bit or variable bit length basis. By employing the single program and erase entity, the subject innovation can provide a cost-effective approach to emulating electrically EEPROM in a flash device.