The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Dec. 11, 2008
Applicants:

Kenji Nishiyama, Yasu, JP;

Takeshi Nakao, Omihachiman, JP;

Michio Kadota, Kyoto, JP;

Inventors:

Kenji Nishiyama, Yasu, JP;

Takeshi Nakao, Omihachiman, JP;

Michio Kadota, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbOsubstrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbOsubstrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality:−10×+92.5−100×≦θ≦37.5×−57.75×+104.075+5710×−1105.7×45.729


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