The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Feb. 16, 2006
Applicants:

Louis L. Hsu, Fishkill, NY (US);

Jack A. Mandelman, Flat Rock, NC (US);

Chandrasekhar Narayan, San Jose, CA (US);

Chun-yung Sung, Poughkeepsie, NY (US);

Inventors:

Louis L. Hsu, Fishkill, NY (US);

Jack A. Mandelman, Flat Rock, NC (US);

Chandrasekhar Narayan, San Jose, CA (US);

Chun-Yung Sung, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 31/058 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2006.01); H01L 31/024 (2006.01); H01L 21/033 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.


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