The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Feb. 08, 2008
Applicants:
Hiroshi Ohkawa, Leuven, BE;
Junji Hirase, Osaka, JP;
Hisashi Ogawa, Osaka, JP;
Kenji Yoneda, Kyoto, JP;
Inventors:
Hiroshi Ohkawa, Leuven, BE;
Junji Hirase, Osaka, JP;
Hisashi Ogawa, Osaka, JP;
Kenji Yoneda, Kyoto, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.