The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Aug. 27, 2008
Applicants:

Keiko Ariyoshi, Yokohama, JP;

Akira Takashima, Fuchu, JP;

Shoko Kikuchi, Kawasaki, JP;

Koichi Muraoka, Sagamihara, JP;

Inventors:

Keiko Ariyoshi, Yokohama, JP;

Akira Takashima, Fuchu, JP;

Shoko Kikuchi, Kawasaki, JP;

Koichi Muraoka, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8247 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory device according to an example of the present invention includes a semiconductor region, source/drain areas arranged separately in the semiconductor region, a tunnel insulating film arranged on a channel region between the source/drain areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulating film. The inter-electrode insulating film includes La, Al and Si.


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