The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Jun. 03, 2005
Hiroaki Tanaka, Toyota, JP;
Sachiko Kawaji, Aichi-ken, JP;
Hiroaki Tanaka, Toyota, JP;
Sachiko Kawaji, Aichi-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
The semiconductor device has a collector electrode, a pcollector region formed on the collector electrode, an ndrift region formed on the collector region, a pbody region formed on the drift region, and a plurality of nemitter regions formed within the body region. The emitter regions are connected to an emitter electrode. A plurality of trench gate electrodes is formed within the body region. Each trench gate electrode opposes, via an insulating layer, a portion of the body region separating the drift region and the emitter region. The body region is divided into a plurality of body sections, and the body sections are classified into two groups. One group has the emitter region within the body section, and the other group has no emitter region within the body section. A plurality of first trenches is formed within the body section having no emitter region. A pcontact region is formed between the first trench and the trench gate electrode.