The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Apr. 10, 2009
Applicants:

Su-hui Lin, Taichung, TW;

Sheng-hsien Hsu, Taiping, TW;

Jing-jie Dai, Changhua, TW;

Tzong Liang Tsai, Taichung, TW;

Inventors:

Su-Hui Lin, Taichung, TW;

Sheng-Hsien Hsu, Taiping, TW;

Jing-Jie Dai, Changhua, TW;

Tzong Liang Tsai, Taichung, TW;

Assignee:

Huga Optotech Inc., Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.


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