The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Nov. 21, 2006
Applicants:

Shin Tack Kang, Yongin-si, KR;

Jeong IL Kim, Incheon, KR;

Jong Hyuk Lee, Seoul, KR;

Yu Jin Kim, Asan-si, KR;

Hyang Shik Kong, Cheonan-si, KR;

Myung Koo Hur, Cheonan-si, KR;

Sung Man Kim, Seoul, KR;

Inventors:

Shin Tack Kang, Yongin-si, KR;

Jeong Il Kim, Incheon, KR;

Jong Hyuk Lee, Seoul, KR;

Yu Jin Kim, Asan-si, KR;

Hyang Shik Kong, Cheonan-si, KR;

Myung Koo Hur, Cheonan-si, KR;

Sung Man Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/13 (2006.01); H03K 19/094 (2006.01);
U.S. Cl.
CPC ...
Abstract

A liquid crystal display device comprises at least two insulating layers formed on a first conductive layer, a second conductive layer formed between the at least two insulating layers, a first contact hole penetrating an upper insulating layer of the at least two insulating layers on the second conductive layer, a second contact hole penetrating the at least two insulating layers and exposing a portion of the first conductive layer, and a contact part comprising a bridge electrode formed of a third conductive layer for connecting the first and second conductive layers through the first and second contact holes. The second contact hole comprises an internal hole penetrating the at least two insulating layers and an external hole surrounding the internal hole forming in the upper insulating layers.


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