The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Feb. 24, 2006
Applicants:
Janos Farkas, Saint Ismier, FR;
Maria Luisa Calvo-munoz, Grenoble, FR;
Srdjan Kordic, Eindhoven, NL;
Inventors:
Janos Farkas, Saint Ismier, FR;
Maria Luisa Calvo-Munoz, Grenoble, FR;
Srdjan Kordic, Eindhoven, NL;
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.