The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Dec. 04, 2007
Hyoung Soon Yune, Seoul, KR;
Hyoung Soon Yune, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of fabricating patterns of a semiconductor device includes the steps of forming first sacrificial layer patterns over a pattern target layer; forming first spacers on sidewalls of the first sacrificial layer patterns; forming a second sacrificial layer pattern over the first sacrificial layer patterns and the first spacers such that at least one of the first spacers is exposed by the second sacrificial layer pattern; forming a dual spacer by forming a second spacer on the exposed first spacer; removing the second sacrificial layer pattern and the first sacrificial layer patterns; and forming a first pattern having a first pitch defined by the first spacers and a second pattern having a second pitch defined by the dual spacer by etching an exposed portion of the pattern target layer using the first spacers and the dual spacer as etching masks.