The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Oct. 12, 2007
Duck-jung Lee, Cheonan-si, KR;
Dae-ho Song, Whanju-gun, KR;
Kyung-seop Kim, Suwon-si, KR;
Yong-eui Lee, Seongnam-si, KR;
Duck-Jung Lee, Cheonan-si, KR;
Dae-Ho Song, Whanju-gun, KR;
Kyung-Seop Kim, Suwon-si, KR;
Yong-Eui Lee, Seongnam-si, KR;
Abstract
A method of manufacturing a thin film transistor ('TFT') substrate includes forming a gate insulating film and an active layer on a substrate, forming a data metal layer including a first, second, and third metal layers on the active layer, forming a first photoresist pattern on the data metal layer, dry-etching the third metal layer by using the first photoresist pattern, simultaneously dry-etching the second and first metal layers by using the first photoresist pattern, dry-etching the active layer by using the first photoresist pattern, etching the first photoresist pattern to form a second photoresist pattern by which the channel region is removed and forming a source electrode and a drain electrode by dry-etching the channel region of the data metal layer by using the second photoresist pattern.