The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
May. 18, 2007
Applicants:
Yu-min Jung, Daejeon, KR;
Ki-hoon Lee, Kyungki-do, KR;
Inventors:
Yu-Min Jung, Daejeon, KR;
Ki-Hoon Lee, Kyungki-do, KR;
Assignee:
IPS Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.
Quick Actions:
Jung, Yu-Min. (2010). Method of depositing chalcogenide film for phase-change memory (U.S. Patent No. 7803656). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7803656
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile