The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Feb. 15, 2006
Yasuhito Urashima, Ichihara, JP;
Yasuhito Urashima, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a second electroconductive semiconductor layer, a transparent electrode contiguous to at least part of a first surface of the second electroconductive semiconductor layer, and a second electrode contiguous to the first electroconductive semiconductor layer; wherein the substrate has a first surface thereof provided with a first region exposed by removal of a first part of the nitride semiconductor layer in a peripheral part of the device and a second region exposed by removal of at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate. A method for the production of the device includes removing a first part of the nitride semiconductor layer in a peripheral part of the device till the substrate is exposed to form a first exposed region thereof and removing at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate is reached to form a second exposed region thereof, wherein the steps are taken by combining the removal with a laser and the removal by wet etching.