The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7803639 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 28, 2010

Filed:

Jan. 04, 2007
Applicants:

Solomon Assefa, Elmsford, NY (US);

Michael C. Gaidis, Wappingers Falls, NY (US);

John P. Hummel, Millbrook, NY (US);

Sivananda K. Kanakasabapathy, Hopewell Junction, NY (US);

Inventors:

Solomon Assefa, Elmsford, NY (US);

Michael C. Gaidis, Wappingers Falls, NY (US);

John P. Hummel, Millbrook, NY (US);

Sivananda K. Kanakasabapathy, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming vertical contacts in an integrated circuit that couple one or more metal lines in a given metallization level to first and second features occupying different levels in the integrated circuit comprises various processing steps. A first etch stop layer is formed overlying at least of portion of the first feature while a second etch stop layer is formed overlying at least a portion of the second feature. An ILD layer is formed overlying the first and second etch stop layers. A photolithographic mask is formed overlying the ILD layer. The photolithographic mask defines a first opening over the first feature and a second opening over the second feature. A first etch process etches a first hole in the ILD layer through the first opening in the photolithographic mask that lands on the first etch stop layer and etches a second hole in the ILD layer through the second opening that lands on the second etch stop layer. Subsequently, a second etch process further etches the first hole so that it lands on the first feature.


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