The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Sep. 22, 2005
Applicants:

Shinji Nozaki, Chofu, JP;

Kazuo Uchida, Chofu, JP;

Hiroshi Morisaki, Chofu, JP;

Takashi Kawasaki, Machida, JP;

Masahiro Ibukiyama, Machida, JP;

Inventors:

Shinji Nozaki, Chofu, JP;

Kazuo Uchida, Chofu, JP;

Hiroshi Morisaki, Chofu, JP;

Takashi Kawasaki, Machida, JP;

Masahiro Ibukiyama, Machida, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 15/14 (2006.01); C01B 33/20 (2006.01); C01B 33/12 (2006.01); C01B 25/00 (2006.01); C01B 33/00 (2006.01); C01B 35/00 (2006.01); C01B 15/00 (2006.01); C30B 1/00 (2006.01); C30B 3/00 (2006.01); C30B 5/00 (2006.01); C30B 28/02 (2006.01); C07C 1/00 (2006.01); C07C 2/00 (2006.01); C07C 4/00 (2006.01); C07C 5/00 (2006.01); C07C 6/00 (2006.01); B01J 19/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.


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