The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Aug. 01, 2005
Dong Pan, Andover, MA (US);
Jifeng Liu, Cambridge, MA (US);
Jurgen Michel, Arlington, MA (US);
John Yasaitis, Lexington, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Dong Pan, Andover, MA (US);
Jifeng Liu, Cambridge, MA (US);
Jurgen Michel, Arlington, MA (US);
John Yasaitis, Lexington, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.