The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7801277 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 21, 2010

Filed:

Mar. 26, 2008
Applicants:

Yun Zou, Clifton Park, NY (US);

Yang Cao, Niskayuna, NY (US);

Louis Paul Inzinna, Scotia, NY (US);

Vasile Bogdan Neculaes, Niskayuna, NY (US);

Inventors:

Yun Zou, Clifton Park, NY (US);

Yang Cao, Niskayuna, NY (US);

Louis Paul Inzinna, Scotia, NY (US);

Vasile Bogdan Neculaes, Niskayuna, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21B 4/00 (2006.01); H01J 35/14 (2006.01); H01J 35/02 (2006.01); H01J 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.


Find Patent Forward Citations

Zou, Yun. (2010). Field emitter based electron source with minimized beam emittance growth (U.S. Patent No. 7801277). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7801277

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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