The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Nov. 18, 2008
Young Pil Kim, Eden Prairie, MN (US);
Chulmin Jung, Eden Prairie, MN (US);
Hyung-kew Lee, Edina, MN (US);
Insik Jin, Eagan, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Young Pil Kim, Eden Prairie, MN (US);
Chulmin Jung, Eden Prairie, MN (US);
Hyung-Kew Lee, Edina, MN (US);
Insik Jin, Eagan, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A memory apparatus having at least one memory cell set comprising a first spin torque memory cell electrically connected in series to a second spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The memory cell set itself is configured to switch between a high resistance state and a low resistance state. The memory apparatus also has at least one reference cell set comprising a third spin torque memory cell electrically connected in anti-series to a fourth spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The reference cell set itself has a reference resistance that is a midpoint of the high resistance state and the low resistance state of the memory cell set.