The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Oct. 16, 2008
Applicants:

Hiroshi Maejima, Chigasaki, JP;

Katsuaki Isobe, Yokohama, JP;

Naoya Tokiwa, Fujisawa, JP;

Satoru Takase, Yokohama, JP;

Yasuyuki Fukuda, Kamakura, JP;

Hideo Mukai, Tokyo, JP;

Tsuneo Inaba, Kamakura, JP;

Inventors:

Hiroshi Maejima, Chigasaki, JP;

Katsuaki Isobe, Yokohama, JP;

Naoya Tokiwa, Fujisawa, JP;

Satoru Takase, Yokohama, JP;

Yasuyuki Fukuda, Kamakura, JP;

Hideo Mukai, Tokyo, JP;

Tsuneo Inaba, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R, Rand R(R<R<R) are selectively set, wherein resistance gaps ΔR(=R−R) and ΔR(=R−R) are set to satisfy the relationship of ΔR>ΔR


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