The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Mar. 08, 2007
Junichi Fujikata, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer () and a pair of metal electrodes () which are arranged on the surface of the semiconductor layer () at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of λ>d>λ/100, where λ is the wavelength of incident light. The metal electrodes () can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (), and a low end portion is embedded in the semiconductor layer () to a position at a depth less than λ/2n, where n is the refractive index of the semiconductor layer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile