The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Oct. 18, 2006
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Masafumi Kubota, Osaka, JP;
Seiji Ueda, Shiga, JP;
Hiroshi Iwai, Kanagawa, JP;
Kazuo Tsutsui, Kanagawa, JP;
Kuniyuki Kakushima, Kanagawa, JP;
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Masafumi Kubota, Osaka, JP;
Seiji Ueda, Shiga, JP;
Hiroshi Iwai, Kanagawa, JP;
Kazuo Tsutsui, Kanagawa, JP;
Kuniyuki Kakushima, Kanagawa, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile