The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Sep. 20, 2007
Koichi Matsuno, Mie, JP;
Koichi Matsuno, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the gate insulating film, a second gate electrode formed on the gate insulating film between the first gate electrode and a contact plug, a first silicon oxide film formed above the substrate between the first and second gate electrodes, a first silicon nitride film formed along the substrate and a side surface of the second gate electrode between the contact plug and the second gate electrode, a second silicon oxide film formed on the first silicon oxide film, the first gate electrode and the second gate electrode, the second silicon oxide film including an upper surface having a height greater than the height of a first upper surface of the first gate electrode relative to the substrate, and a second silicon nitride film formed on the second silicon oxide film.