The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jul. 23, 2008
Jong-jan Lee, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Douglas James Tweet, Camas, WA (US);
Jer-shen Maa, Vancouver, WA (US);
Jong-Jan Lee, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Douglas James Tweet, Camas, WA (US);
Jer-Shen Maa, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.