The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Mar. 28, 2008
Tomohiro Murata, Osaka, JP;
Masayuki Kuroda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening for exposing the first semiconductor layer; and a source electrode and a drain electrode which are formed on the cap layer so as to oppose to each other with the opening interposed. A gate electrode is formed on the bottom face of the opening with an insulating film interposed. The insulating film is formed on at least a part of the first semiconductor layer which is exposed through the opening.